Timezone:Asia/Shanghai
Day 3,Aug. 27, 2021Friday
S5&S6 |
WBG Device Design and Gate Drivers@Oral Session 22021-08-27 08:30 ~ 11:30 ZOOM Conference Enter meeting room Timetable V13 Updated:2021-08-26 10:02:01 |
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Start | End | Duration | ID | Title |
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WBG Device Design | ||||
Chair: Lin Liang, Huazhong University of Science and Technology / Yanqing Wu, Peking University | ||||
08:30 | 08:45 | 15 | 103 |
Comparing Hexagonal and Circular Cell Designs for SiC MPS Diode: The Curvature Effect on Avalanche CapabilityLi Liu/Zhejiang University
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08:45 | 09:00 | 15 | 115 |
Improved Breakdown Characteristics for AlN/GaN/InGaN Coupling Channel HEMTs with SiNx Removal and Backfill TechniqueHao Lu/School of Microelectronics, Xidian University
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09:00 | 09:15 | 15 | 94 |
Multiple UIS Ruggedness of 1200V Asymmetric Trench SiC MOSFETsWei Huang/University of Electronic Science and Technology of China
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09:15 | 09:30 | 15 | 84 |
A Novel GaN MIS-HEMT with a Source-connected Clamp Electrode for Suppressing Short-channel effectYijun Shi/The Fifth Institute of Electronics, Ministry of Industry and Information Technology
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09:30 | 09:45 | 15 | 83 |
Resonant Gate Driver with Wide Range Adjustment of Driving SpeedQiaozhi Yue Student/Huazhong University of Science and Technology
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09:45 | 10:00 | 15 | Coffee break | |
Device Gate Drivers | ||||
Chair: Zicheng Liu, Huazhong University of Science and Technology / Hanyu Wang, Hefei University of Technology | ||||
10:00 | 10:15 | 15 | 91 |
Optimized Parameter Selection Method of Driving Circuit for SiC MOSFETHaihong Qin/Nanjing University of Aeronautics and Astronautics
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10:15 | 10:30 | 15 | 104 |
Analysis of Crosstalk and Suppression Methods for Enhancement-Mode GaN HEMTs in A Phase-Leg TopologyHaihong Qin/Nanjing University of Aeronautics and Astronautics
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10:30 | 10:45 | 15 | 70 |
An Optimized Parameter Design Method for Desaturation Protection Circuit towards Fast Response Speed and Strong Noise ImmunityCheng Qian/Huazhong University of Science and Technology
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10:45 | 11:00 | 15 | 97 |
A Review of the Crosstalk Suppression Methods for SiC MOSFETs in the Phase-leg Circuit ConfigurationYujie Ding/Fudan University
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11:00 | 11:15 | 15 | 76 |
A Synchronous Boot-strapping Technique with Increased On-time and Improved Efficiency for High-side Gate-drive Power DeliveryNathan Miles Ellis Post-doctoral/University of California Berkeley
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S7&S8 |
WBG Power Converters & WBG Device Characteristic and Converter Modeling@Oral Session 22021-08-27 14:00 ~ 17:00 ZOOM Conference Enter meeting room Timetable V13 Updated:2021-08-26 10:02:01 |
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Start | End | Duration | ID | Title |
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WBG Power Converters | ||||
Chair: Hongfei Wu, Nanjing University of Aeronautics and Astronautics / Dong Jiang, Huazhong University of Science and Technology | ||||
14:00 | 14:15 | 15 | 113 |
Soft-Switching Resonant Active Clamp Flyback based-on GaN HEMTs for MHz High Step-Up ApplicationsWuji Meng/Nanjing University of Aeronautics and Astronautics
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14:15 | 14:30 | 15 | 78 |
Design of a 10kW, High-Frequency Dual Active Bridge Converter Using SiC DevicesHaoyuan Jin/Xi'an Jiaotong University
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14:30 | 14:45 | 15 | 106 |
A Single-Stage Modular DCX with High Voltage Conversion Ratio Based on High Frequency LLC Resonant ConverterWen Zhaoliang student/Harbin Institute of Technology
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14:45 | 15:00 | 15 | 65 |
Comparison of Two Types of Single Gate Drivers for SiC MOSFET Stacks in Flyback ConvertersRui Wang Doctor/Aalborg University
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15:00 | 15:15 | 15 | 79 |
Review of soft-switching high-frequency GaN-based single-phase Bridgeless RectifierYunfeng Liu/Department of Electrical Engineering, Technical University of Denmark
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15:15 | 15:30 | 15 | 92 | |
15:30 | 15:45 | 15 | Coffee break | |
WBG Device Characteristic and Converter Modeling | ||||
Chair: Zhang Yu, Huazhong University of Science and Technology / Han Peng, Huazhong University of Science and Technology | ||||
15:45 | 16:00 | 15 | 74 |
Modeling and Design of A 10MHz Class Φ2 InverterYongzhi Liu/Huazhong University of Science and Technology,School of Electrical and Electronic Engineering
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16:00 | 16:15 | 15 | 101 |
A Real-Time Self-Learning High Performance Control for Megahertz GaN-based DC-DC ConverterJing Chen/Huazhong University of Science and Technology,the State Key Laboratory of Advanced Electromagnetic Engineering and Technology
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16:15 | 16:30 | 15 | 105 |
Comparison Study on Short Circuit Capability of 1.2 kV Split-Gate MOSFET and Split-Source MOSFET with Integrated JBS DiodeHongyi Xu/Zhejiang University
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16:30 | 16:45 | 15 | 95 |
Single Pulse Short-Circuit Failure Mechanism of 1200V Asymmetric Trench SiC MOSFETsZhaoxiang Wei/Southeast University, Nanjing, China
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16:45 | 17:00 | 15 | 75 |
The Influence of Dynamic Threshold Voltage Drift on Third Quadrant Characteristics of SiC MOSFETLei Tang/Chongqing university
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