Analysis of Crosstalk and Suppression Methods for Enhancement-Mode GaN HEMTs in A Phase-Leg Topology
ID:104 Submission ID:46 View Protection:ATTENDEE Updated Time:2021-08-20 15:20:53 Hits:534 Oral Presentation

Start Time:2021-08-27 10:15 (Asia/Shanghai)

Duration:15min

Session:[Room2] Oral Session 2 [S5&S6] WBG Device Design and Gate Drivers

Presentation File

Tips: The file permissions under this presentation are only for participants. You have not logged in yet and cannot view it temporarily.

Abstract
When using traditional driver circuits, enhanced gallium nitride power devices (eGaN HEMTs) suffer from serious crosstalk problems in a phase-leg topology. An improved active Miller clamp driver circuit is proposed. First, the crosstalk mechanism is analyzed, and the influence of various factors on crosstalk were evaluated experimentally. Then, the operating principle of the improved active Miller clamp driver circuit is discussed, and the optimized parameter design method is given. Finally, the effect of the improved active Miller clamp method to suppress crosstalk is verified on a double pulse test platform.
 
Keywords
eGaN HEMT,crosstalk suppression,gate driver,high-speed switching
Speaker
Haihong Qin
Nanjing University of Aeronautics and Astronautics

Submission Author
Haihong Qin Nanjing University of Aeronautics and Astronautics
Wenlu Wang Nanjing University of Aeronautics and Astronautics
Feifei Bu Nanjing University of Aeronautics and Astronautics
Zihe Peng Nanjing University of Aeronautics and Astronautics
Ao Liu Nanjing Electronic Devices Institute
Song Bai Nanjing Electronic Devices Institute
Comment submit
Verification code Change another
All comments