Comparison Study on Short Circuit Capability of 1.2 kV Split-Gate MOSFET and Split-Source MOSFET with Integrated JBS Diode
ID:105 Submission ID:45 View Protection:ATTENDEE Updated Time:2021-07-21 20:06:13 Hits:622 Oral Presentation

Start Time:2021-08-27 16:15 (Asia/Shanghai)

Duration:15min

Session:[Room2] Oral Session 2 [S7&S8] WBG Power Converters & WBG Device Characteristic and Converter Modeling

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Abstract
In this work, the JBS integrated MOSFETs with two kinds of integration, i.e., JBS cell integrated in source region (named Split-Source MOSFET) and JBS cell integrated in gate region (named Split-Gate MOSFET) are investigated and the most important reliability aspect, i.e., short circuit robustness is compared via experiment and simulation. The device failure mechanisms are studied and the method of improving short circuit ruggedness of the JBS integrated MOSFET is proposed.
 
Keywords
SiC MOSFET,Integrated JBS,Short circuit
Speaker
Hongyi Xu
Zhejiang University

Submission Author
Hongyi Xu Zhejiang University
Chaobiao Lin Zhejiang University
Na Ren Zhejiang University
Xinhui Gan China Resources Microelectronics Limited
Liping Liu China Resources Microelectronics Limited;
Zhengyun Zhu Zhejiang University
Li Liu Zhejiang University
Qing Guo Zhejiang University
Jianxin Ji China Resources Microelectronics Limited
Kuang Sheng Zhejiang University
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