Design and fabrication of low pinch-off voltage 700V lateral 4H-SiC MESFET with thin RESURF layer
ID:107 Submission ID:37 View Protection:ATTENDEE Updated Time:2021-07-21 20:06:14 Hits:324 Oral Presentation

Start Time:Pending (Asia/Shanghai)

Duration:Pending

Session:[No Session] [No Session Block]

No files

Abstract
The objective of this work is to develop lateral 4H-SiC power devices that could be integrated into a monolithic high voltage power IC (HVIC) chip using thin RESURF layer. Junction isolation structure between neighboring devices can be easily achieved through mesa etch. This paper proposes a high breakdown voltage lateral RESURF MESFET structure and edge termination technique using epitaxially grown thin RESURF wafer.
Keywords
4H-SiC,RESURF,Lateral,MESFET,TCAD simulation,3D simulation
Speaker
Atsushi Shimbori
Research Assistant University of Texas at Austin

Submission Author
Atsushi Shimbori University of Texas at Austin
Alex Huang University of Texas at Austin
Comment submit
Verification code Change another
All comments