Characteristics of SiC MOSFET in a Wide Temperature Range
ID:110 Submission ID:26 View Protection:ATTENDEE Updated Time:2021-07-21 20:06:16 Hits:603 Oral Presentation

Start Time:2021-08-27 10:45 (Asia/Shanghai)

Duration:15min

Session:[Room1] Oral Session 1 [S1&S2] WBG Device Modeling, Simulation and Reliability

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Abstract
In order to expand the application of SiC MOSFET in a wide temperature range, the performance of SiC MOSFET from 25 °C to 425 °C is studied in this paper by taking the 1.2 kV QPM3-1200-0013D as an example. Different from the device characteristics given in the data sheet or previous articles at only three discrete temperatures or temperatures below 250 °C, the temperature-dependent static characteristics of SiC MOSFET are remeasured and nonlinearly characterized in a wide temperature
range in this paper. In addition, considering the improvement effect of SiC Schottky barrier diode on the reliability of SiC MOSFET’s body diode, the temperature-dependent static characteristics of SiC Schottky barrier diode are also analyzed in this paper, which provides guidance for the high-temperature pre-design and application of SiC MOSFET.
Keywords
SiC MOSFET,Schottky barrier diode (SBD),High Temperature
Speaker
Mengyu Zhu
Xi'an Jiaotong University

Submission Author
Mengyu Zhu Xi'an Jiaotong University
Laili Wang Xi'an Jiaotong University
Huaqing Li Xi'an Jiaotong University
Chengzi Yang Xi'an Jiaotong University
Dingkun Ma Xi'an Jiaotong University
Fengtao Yang Xi'an Jiaotong University
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