Improved Breakdown Characteristics for AlN/GaN/InGaN Coupling Channel HEMTs with SiNx Removal and Backfill Technique
ID:115 Submission ID:12 View Protection:ATTENDEE Updated Time:2021-07-21 20:06:19 Hits:470 Oral Presentation

Start Time:2021-08-27 08:45 (Asia/Shanghai)

Duration:15min

Session:[Room2] Oral Session 2 [S5&S6] WBG Device Design and Gate Drivers

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Abstract
In this work, we report high breakdown characteristics of AlN/GaN/InGaN coupling channel HEMTs (CC-HEMTs) using by silicon nitride (SiNx) passivation layer removal and backfill technique (PRB). Owing to the modulated barrier stress and blocked interface leakage path, the fabricated HEMTs exhibit excellent electrical characteristics, including a high breakdown voltage of 340 V. The small-signal measurements revealed that the current gain cutoff frequency (fT) and maximum oscillation frequency (fmax) are 12.3 and 35.9 GHz, respectively. A high Johnson’s figure of merit (JFoM) of 4.2 THz•V is achieved, benchmark against state-of-the-art (SOA) report of existing GaN HEMTs platform. These results have proved that the great potential of AlN/GaN/InGaN CC-HEMTs with reasonable device design applied for the next generation radio frequency front-end modules (FEMs) and power conversion integrated circuits.    
Keywords
AlN barrier,high breakdown field,coupling channel,Gallium nitride,HEMT
Speaker
Hao Lu
School of Microelectronics; Xidian University

Submission Author
Hao Lu School of Microelectronics; Xidian University
Xiaohua Ma Xidian University
Bin Hou Xidian University
Ling Yang Xidian University
Yue Hao Xidian University
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