The purpose of this work is to propose a novel electro-thermal co-simulation approach for the new generation of SiC MOSFETs, by development of a Simulink-based compact and physical SiC MOSFET model including temperature dependency of physical parameters and a COMSOL-based three-dimensional finite element thermal model. The electrical model is capable to estimate the switching and the static behavior and the energy losses of the device accurately under a wide range of operational conditions, including high temperature operations, within a relatively fast simulation time. The three-dimensional finite element thermal model is established in COMSOL and a reasonable partition of the SiC MOSFET chip is conducted so that the different distribution of electro-thermal stress on chip can be observed. A MATLAB script is used to process the simulation data and feed the needed settings and parameters back into the two simulation platforms. The script is able to control the simulation steps of the two different models and the multi time-scale simulation is realized. Finally, the co-simulation approach is verified by experiments with a CREE 1200V/325A SiC MOSFET.
 

SiC MOSFET,modeling,electro-thermal coupling simulation,Co-Simulation