Development of High Voltage SiC Power MOSFETs
ID:122 View Protection:ATTENDEE Updated Time:2021-07-26 13:34:54 Hits:477 Invited speech

Start Time:2021-08-26 15:10 (Asia/Shanghai)

Duration:40min

Session:[K] Plenary Session [K2] Plenary Session 2

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Abstract
Development of High Voltage SiC Power MOSFETs
Keywords
Speaker
Song Bai
State Key Laboratory of Wide Bandgap Semiconductor Power Electronic Devices

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