Evaluating Switching Performance of GaN HEMT Using Analytical Modeling
ID:137 View Protection:PUBLIC Updated Time:2021-08-09 12:34:08 Hits:238 Poster Presentation

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Evaluating switching performance of the gallium nitride high electron mobility transistor (GaN HEMT) is critical for its application in power converter/inverter. In this paper, an analytical model is proposed to comprehensively evaluate switching characteristics of GaN HEMT. The model has considered nonlinear junction capacitance as well as forward and reverse transconductance, skin effect during oscillation period, and interactions between high- and low-side GaN HEMTs. As a result, the switching losses, switching oscillation, and crosstalk issue during switching transient can be correctly reflected together. Comparisons between simulation and experiment results manifest that the model can evaluate switching performance of the GaN HEMT in higher accuracy compared with other existing models. Consequently, the model is expected to provide many valuable design references in applying GaN HEMT.
Gallium nitride high electron mobility transistor (GaN HEMT), switching loss, switching oscillation, crosstalk, analytical modeling.
Yingzhe Wu
University of Electronic Science and Technology of China

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