Comparison of Gate Leakage Current in AlGaN/GaN HEMTs with Different Passivation Technology
ID：31
Submission ID：92 View Protection：PUBLIC
Updated Time：2021-07-21 20:02:09 Hits：948
Poster Presentation
Start Time：2021-08-27 12:36 （Asia/Shanghai）
Duration：1min
Session：[P] Poster » [P1] Poster 1
Abstract
SiN passivation with Si-rich SiN interlayer has been studied in Al0.25Ga0.75N/GaN HEMTs. The off-state current (@Vg = -10V) of devices with Si-rich SiN is 3.8×10-4 mA/mm and that of devices without Si-rich SiN is 0.8×10-2 mA/mm, respectively. The leakage mechanism of schottky gate AlGaN/GaN HEMTs is dominated by Poole-Frenkel (PF) emission. The extracted trap energy level for HEMTs with Si-rich SiN and without Si-rich SiN are 0.65 eV and 0.26 eV, respectively.
Keywords
AlGaN/GaN HEMTs
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