LLC Resonant Converter Based on Trench Gate SiC MOSFET
ID:46 Submission ID:63 View Protection:PUBLIC Updated Time:2021-08-21 11:02:42 Hits:500 Poster Presentation

Start Time:2021-08-27 12:22 (Asia/Shanghai)

Duration:1min

Session:[P] Poster » [P1] Poster 1

Abstract
LLC resonant converter has become a popular topology for DC-DC converters because of its soft switching characteristics. It has many advantages such as high efficiency, high power density, and low noise. The traditional Si MOSFET LLC resonant converter cannot continue to improve due to the limitations of the Si characteristics in terms of frequency and efficiency. This article explores the advantages of SiC MOSFET in LLC resonant converter, and compares the conversion efficiency for trench-gate SiC MOSFET, planar-gate SiC MOSFET and Si MOSFET.
Keywords
LLC resonant converte,SiC MOSFET,reverse recovery characteristics,efficiency
Speaker
Jinkun Chu
Anhui University of Technology

Submission Author
Jinkun Chu Anhui University of Technology
Yuming Zhou Anhui University of Technology
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