The dynamic current sharing between the parallel SiC chips is important in multi-chip SiC modules. This paper presents a dynamic current sharing method in multi-chip SiC module without changing the original simple module layout. This method is based on stacked DBC bridges and decoupling capacitors. Decoupling capacitors are soldered on the stacked DBC bridges distributed between the SiC chips connecting the DC+ and DC- electrodes. By this method, distributed decoupling structure is achieved without changing the original simple module layout. The module structure, the design process and the fabrication process are kept simple, and the dynamic current imbalance is reduced. This method is easier to implement than other dynamic current sharing methods. This method is verified by simulations and experiments. Compared with the original structure without this method and the concentrated-decoupling structure, dynamic current imbalance of the improved structure using this method is reduced significantly.

dynamic current sharing, multichip SiC modules, paralleled SiC MOSFETs, distributed decoupling capacitors