Comparison of the Influence of Reverse Conduction on EMI of WBG And Si Devices
ID：53
Submission ID：38 View Protection：PUBLIC
Updated Time：2021-08-21 10:57:21
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Poster Presentation
Start Time：2021-08-27 12:15 （Asia/Shanghai）
Duration：1min
Session：[P] Poster » [P1] Poster 1
Abstract
Silicon carbide (SiC) metal-oxide -semiconductor field effect transistor (MOSFET) and gallium nitride (GaN) high electron mobility transistor (HEMT), are widely used in power electronics due to their fast switching speed. However, the increasing switching speed will cause more serious electromagnetic interference (EMI) problems. To compare the EMI generated by wide bandgap (WBG) devices and Si counterparts, a datasheet-based analytical method to predict the EMI of different devices is proposed here. What’s more, a
parameter n is defined to analyze and compare the influence of the reverse conduction of Si, SiC and GaN on high-frequency EMI. The result reveals that the larger n is, the more serious the effect of reverse conduction on EMI. The DPT experiments of Si, SiC and GaN devices were carried out, which verified the accuracy of the above analysis
parameter n is defined to analyze and compare the influence of the reverse conduction of Si, SiC and GaN on high-frequency EMI. The result reveals that the larger n is, the more serious the effect of reverse conduction on EMI. The DPT experiments of Si, SiC and GaN devices were carried out, which verified the accuracy of the above analysis
Keywords
Electromagnetic interference (EMI), gallium nitride (GaN), high voltage direct current (HVDC), reverse conduction，silicon carbide (SiC)
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