An Accurate Crosstalk Evaluation and Prediction Method for SiC MOSFET Considering Nonlinear Capacitance and  Stray Parameters
ID:66 Submission ID:10 View Protection:PUBLIC Updated Time:2021-08-22 19:01:36 Hits:433 Poster Presentation

Start Time:2021-08-27 12:03 (Asia/Shanghai)

Duration:1min

Session:[P] Poster [P1] Poster 1

Abstract
In high-frequency applications of SiC MOSFET, crosstalk restricts the switching speed, increases additional switching losses and reduces the system stability. This paper proposes an accurate crosstalk evaluation and prediction method for SiC MOSFET, which considers nonlinear capacitance and stray parameters. This method analyse the influence of drain-to-gate stray capacitance Cdg caused by PCB layout on crosstalk voltage for the first time. The performance of this proposed method is verified and compared experimentally by a double-pulse test (DPT) platform.
 
Keywords
SiC MOSFET, crosstalk, nonlinear capacitance, stray parameters
Speaker
Huaqing Li
student Xi'an Jiaotong University

Submission Author
Huaqing Li Xi'an Jiaotong University
Chengzi Yang Xi'an Jiaotong University
Longyang Yu Xi'an Jiaotong University
Haoyuan Jin Xi’an Jiaotong University
Xingshuo Liu Xi'an Jiaotong University
Laili Wang Xi'an Jiaotong University
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