In high-frequency applications of SiC MOSFET, crosstalk restricts the switching speed, increases additional switching losses and reduces the system stability. This paper proposes an accurate crosstalk evaluation and prediction method for SiC MOSFET, which considers nonlinear capacitance and stray parameters. This method analyse the influence of drain-to-gate stray capacitance C_dg’ caused by PCB layout on crosstalk voltage for the first time. The performance of this proposed method is verified and compared experimentally by a double-pulse test (DPT) platform.
 

SiC MOSFET, crosstalk, nonlinear capacitance, stray parameters