The Influence of Dynamic Threshold Voltage Drift on Third Quadrant Characteristics of SiC MOSFET
ID：75
Submission ID：141 View Protection：ATTENDEE
Updated Time：2021-07-21 20:05:54 Hits：746
Oral Presentation
Start Time：2021-08-27 16:45 （Asia/Shanghai）
Duration：15min
Session：[Room2] Oral Session 2 » [S7&S8] WBG Power Converters & WBG Device Characteristic and Converter Modeling
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Abstract
Abstract—The conduction characteristics of the third quadrant of SiC MOSFET are mainly the current sharing between the MOS channel and the body diode which can be affected by many factors. This paper presents a comprehensive study of the influence of dynamic threshold voltage drift on third quadrant characteristics of SiC MOSFET. By combining the equivalent potential model, TCAD simulation, and experiment, it is revealed that once the threshold drifts by dynamic gate voltage stress, the static and dynamic characteristics of third quadrant of SiC MOSFET will change. Furthermore, the current sharing of parallel devices is also affected by dynamic threshold voltage drift. These results provide an effective guide for the third quadrant application of SiC MOSFET.
Keywords
Body diode,SiC MOSFET,Third quadrant characteristics,Dynamic threshold voltage drift
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