Design of a 10kW, High-Frequency Dual Active Bridge Converter Using SiC Devices
ID：78
Submission ID：122 View Protection：ATTENDEE
Updated Time：2021-07-21 20:05:56 Hits：467
Oral Presentation
Start Time：2021-08-27 14:15 （Asia/Shanghai）
Duration：15min
Session：[Room2] Oral Session 2 [S7&S8] WBG Power Converters & WBG Device Characteristic and Converter Modeling
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Abstract
Dual active bridge (DAB) converter is widely used as a dc transformer in high power applications. This paper gives a general design method for high-frequency DAB converter using silicon carbide (SiC) MOSFETs, and gives mathematical analysis for designing the inductor and transformer for the DAB converter. The inductance calculation is critical in the designing process, especially in the high-frequency area, considering the dead-time effect and zero-voltage-switching (ZVS) requirement. It can be divided into four steps, including converter power requirement, inductor energy requirement, dead-time effect requirement and rms of the inductor current. A 10kW, 100kHz DAB converter using SiC MOSFETs is built, achieving ZVS turn-on successfully. The efficiency is up to 97.1% at 10kW, and the power density is 4.18W/cm3.
Keywords
Dual active bridge; SiC ; inductor; ZVS; deadtime
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