2021-08-27 08:30 ~ 11:30 (Asia/Shanghai)
ZOOM Conference / WIPDA-Asia 2021 ROOM 1
View Protection：Public Video Views：640 Live Views：769 Updated Time：2021-09-03 11:50:58
Timetable
Device Modeling and Simulation
Chair: Yu Chen, Huazhong University of Science and Technology / Xiaochuan Deng, University of Electronic Science and Technology of China
08-27
08:30~08:45
08-27
08:45~09:00
08-27
09:00~09:15
08-27
09:15~09:30
08-27
09:30~09:45
Coffee Break
WBG Device Reliability
Chair: Meng Huang, Wuhan University / Qing Guo, Zhejiang University
08-27
09:45~10:00

Analysis of GaN HEMT Degradation under RF Overdrive Stress

YuHan Xie，；South China University of Technology
08-27
10:00~10:15

Analysis of the influence of vibration and thermal vibration coupling on the power module

JiaJia Guan，Huazhong University of Science and Technology
08-27
10:15~10:30
08-27
10:30~10:45

Failure Analysis of 200V p-GaN HEMT under Unclamped Inductive Switching Conditions

Xuan Li，University of Electronic Science and Technology of China
08-27
10:45~11:00

Characteristics of SiC MOSFET in a Wide Temperature Range

Mengyu Zhu，Xi'an Jiaotong University
Comment submit
Verification code Change another
All comments

wipda-asia-2021@hust.edu.cn

Copyright © IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Powered by Aconf.org, One-stop Solutions for Academic Events

Manage the conference