A Novel Low Parasitic Inductance SiC Power Module Based on Symmetrical Planar Packaging Structure and Integrating the Laminated Busbar
ID：102
Submission ID：51 View Protection：ATTENDEE
Updated Time：2021-07-21 20:06:11 Hits：558
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Abstract
This paper presents a SiC multichip power module with low parasitic inductance and symmetric layout of chips. The novelty of this module lies in the integration of a laminated busbar which can result in a significant reduction of the module parasitic inductance. Moreover, a 3D vertical structure design can reduce the commutation loop area inside the module, thereby further achieving a lower commutation loop inductance. Besides, a fan-shaped DBC layout is designed to ensure the symmetrical layout of the paralleled chips, which can realize a better current sharing performance. By the Ansys Q3D, the extracted parasitic inductance of the module is about 5.63nH, and the the imbalance degree between each parallel branch is about 5.8%. Finally, the low parasitic inductance and highly symmetry of the module are verified by the experimental tests.
Keywords
Low Parasitic Inductance,current sharing,Laminated Busbar,Symmetrical design
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