|
August 25, Wednesday |
||
|
Tutorial |
||
|
Time |
Zoom Meeting ID: 842 0481 1080 |
Zoom Meeting ID: 873 1966 9550 |
| Chairs | Dong Jiang, Huazhong University of Science and Technology | Han Peng, Huazhong University of Science and Technology |
|
13:30-14:30 |
Tutorial 1: Multi-MHz Power Conversion Technology Based on GaN Devices
Yueshi Guan, Yijie Wang, Dianguo Xu Harbin Institute of Technology |
Tutorial 5: Resonant Gate Drivers For SiC Devices In High Frequency, High Power Density Applications
Han Peng Huazhong University of Science and Technology |
|
14:30-15:30 |
Tutorial 2: High Frequency Power Conversion with SiC Power Devices for The High Voltage Power Supply with Fast Transient Response
Saijun Mao, Fudan University |
Tutorial 6: Thermal Design and Optimization of SiC Power Module
Zhiqiang (Jack) Wang, Tong Wu Huazhong University of Science and Technology, ON Semiconductor |
|
15:30-16:00 |
Break |
|
|
16:00-17:00 |
Tutorial 3: Sintered-Silver Bonding (SSB) for Power Packaging: Its Science and Practice
Yunhui Mei, Tiangong University |
Tutorial 7: Design Advances in High Frequency Power Converters with Wide Bandgap Devices ---Part1: Power Loop Impedance Control
Zhe Zhang, Technical University of Denmark / Bainan Sun, Infineon Technologies / Hongbo Zhao, Aalborg University / Zhan Shen, Aalborg University |
|
17:00-18:00 |
Tutorial 4: Advanced Packaging Technologies for Silicon Carbide Devices and Their Reliability Issues
Nan Jiang Hefei Comprehensive National Science Center |
Tutorial 8: Design Advances in High Frequency Power Converters with Wide Bandgap Devices ---Part 2: Magnetics
Zhe Zhang, Technical University of Denmark / Bainan Sun, Infineon Technologies / Hongbo Zhao, Aalborg University / Zhan Shen, Aalborg University |
|
14:00-18:00 |
Vendor Online Exhibition |
|
|
August 26, Thursday Zoom Meeting ID: 881 8063 8333 |
|
|
Chair：Prof. Yong Kang, Huazhong University of Science and Technology, China |
|
|
08:45-08:50 |
Welcome Speech 1
Prof. Shijie Cheng |
| 08:50-09:00 |
Welcome Speech 2
Prof. Jinyu Wen |
|
Keynote Speech |
|
|
09:00-9:40 |
Next Generation of Power Supplies: EV On-Board Charger
Prof. Fred C. Lee University Distinguished Professor Emeritus, Virginia Tech, USA Member of National Academy of Engineering IEEE Fellow |
|
9:40-10:20 |
Designing Wide Bandgap Power Electronic Systems
Prof. Alan Mantooth University Distinguished Professor, University of Arkansas, USA Past-President of IEEE Power Electronics Society IEEE Fellow |
|
10:20-10:30 |
Break |
|
Chair：Prof. Xiaoming Zha, Wuhan University, China |
|
|
10:30-11:10 |
The Research of High Frequency, High Efficiency and High Power Density (3H) Application for GaN Devices
Prof. Yong Kang Huazhong University of Science and Technology, China |
|
11:10-11:50 |
Development and Applications of Packaging Materials for Power Semiconductor Devices
Prof. Mingxiang Chen Huazhong University of Science and Technology, China |
|
12:00-13:30 |
Vendor Online Exhibition |
|
Chair：Prof. Xuejun Pei, Huazhong University of Science and Technology, China |
|
|
14:30-15:10 |
Technology Trends of SiC Chips and Modules
Dr. Harufusa Kondo Senior Technical Advisor, Mitsubishi Electric, Power Device Works, Japan |
|
15:10-15:50 |
Development of High Voltage SiC Power MOSFETs
Dr. Song Bai Director, State Key Laboratory of Wide Bandgap Semiconductor Power Electronic Devices, China |
|
15:50-16:00 |
Break |
|
Chair：Prof. Zhiqiang Wang, Huazhong University of Science and Technology, China |
|
|
16:00-16:40 |
WBG Power Devices and Digital Design Framework: Challenges, Possibilities, Opportunities
Prof. Stig Munk-Nielsen Aalborg University, Denmark |
|
August 27, Friday |
|||
|
Time |
Zoom Meeting ID：842 0481 1080 |
Zoom Meeting ID：873 1966 9550 |
Zoom Meeting ID：881 8063 8333 |
|
08:30-09:45 |
Oral Session 1: WBG Device Modeling and Simulation |
Oral Session 5: WBG Device Design |
Industry Session 1 |
|
09:45-10:00 |
Break |
||
|
10:00-11:30 |
Oral Session 2: WBG Device Reliability |
Oral Session 6: WBG Device Gate Drivers |
Industry Session 2 |
|
12:00-13:30 |
Poster Session |
||
|
14:00-15:15 |
Oral Session 3: WBG Device Applications |
Oral Session 7: WBG Power Converters |
|
|
15:15-15:30 |
Break |
||
|
15:30-17:00 |
Oral Session 4: WBG Device Package Design & Analysis |
Oral Session 8: WBG Device Characteristic and Converter Modeling |
|
Oral Session
Aug 27, 2021 08:30~11:30
|
S1: Device Modeling and Simulation |
|||
|
Chair: Yu Chen, Huazhong University of Science and Technology / Xiaochuan Deng, University of Electronic Science and Technology of China |
|||
|
Start |
Duration |
ID |
Title |
|
08:30 |
15 |
157 |
Cheng Qian, Yuxin Ge, Zhiqiang (Jack) Wang, Yong Kang |
|
08:45 |
15 |
1 |
Identification Method for the HF-Osc of SiC MOSFET Based on Instantaneous Frequency Xin Li, Ruitian Wang, Fei Xiao, Yifei Luo, Zenan Shi, Feng Xie |
|
09:00 |
15 |
150 |
Yayong Yang, Yuxin Ge, Zhiqiang (Jack) Wang, Yong Kang |
|
09:15 |
15 |
55 |
Yuqi Wei, Dereje Woldegiorgis, Xia Du, Venkata Samhitha Machireddy, Alan Mantooth |
|
09:30 |
15 |
91 |
A Physics-Based Unified Compact Model for Si/SiC IGBT in LTspice Md Maksudul Hossain, Arman Ur Rashid, Yuqi Wei, H. Alan Mantooth |
|
9:45 |
15 |
Coffee Break |
|
|
S2: WBG Device Reliability |
|||
|
Chair: Meng Huang, Wuhan University / Qing Guo, Zhejiang University |
|||
|
10:00 |
15 |
13 |
Analysis of GaN HEMT Degradation under RF Overdrive Stress Yuhan Xie, Yan Ren, Chang Liu, Yiqiang Chen, Rongsheng Chen |
|
10:15 |
15 |
11 |
Analysis of the influence of vibration and thermal vibration coupling on the power module Jiajia Guan, Chi Zhang, Cai Chen, Yong Kang |
|
10:30 |
15 |
104 |
Investigation of the Insulation Failure of Power Modules by Observation of Electrical Trees Kaixuan Li, Boya Zhang, Xingwen Li, Haotao Ke |
|
10:45 |
15 |
100 |
Failure Analysis of 200V p-GaN HEMT under Unclamped Inductive Switching Conditions Junjie Ye, Li Xuan, Yangyang Wu, Xiaochuan Deng, Zhiqiang Li, Bo Zhang |
|
11:00 |
15 |
26 |
Characteristics of SiC MOSFET in a Wide Temperature Range Mengyu Zhu, Laili Wang, Huaqing Li, Chengzi Yang, Dingkun Ma, Fengtao Yang |
Aug 27, 2021 14:00~17:30
|
S3: WBG Device Applications |
|||
|
Chair: Xuehua Wang, Huazhong University of Science and Technology / Haoze Luo, Zhejiang University |
|||
|
Start |
Duration |
ID |
Title |
|
14:00 |
15 |
109 |
Yifei Luo, Xin Li, Fei Xiao, Zenan Shi, Ruitian Wang, Feng Xie |
|
14:15 |
15 |
89 |
Analysis of an Output Series High Voltage Gain Impedance Source Circuit Based on SiC Switch Qing Cheng, Wei Wang, Yueshi Guan, Tingting Yao, Dianguo Xu |
|
14:30 |
15 |
118 |
Homogeneous-Flux Transmitter Coil Design with Improved Position Tolerance Yunfeng Liu, Yi Dou, Ziwei Ouyang, Michael A. E. Andersen |
|
14:45 |
15 |
152 |
Neng Wang, Cheng Qian, Zhiqiang (Jack) Wang, Yong kang |
|
15:00 |
15 |
96 |
Adaptive Digital Technique Assisted Hard Switching Fault Detection for SiC MOSFETs Saravanan DhanaseKaran, Vamshi Krishma Miryala, Kamalesh Hatua |
|
15:15 |
15 |
Coffee Break |
|
|
S4: WBG Device Package Design & Analysis |
|||
|
Chair: Jianing Wang, Hefei University of Technology / Cai Chen, Huazhong University of Science and Technology |
|||
|
15:30 |
15 |
29 |
Yue Xie, Yifan Zhang, Cai Chen, Yong Kang |
|
15:45 |
15 |
74 |
Yu Zhou, Yu Chen, Hongyi Gao, Chengmin Li, Haoze Luo, Wuhua Li, Xianging He |
|
16:00 |
15 |
126 |
A High Power Density Chip-on-Chip Gan-based Module with Ultra-Low Parasitic Inductance Yi Zhang, Zongheng Wu, Cai Chen, Yong Kang, Han Peng |
|
16:45 |
15 |
50 |
Yujie Du, Xinling Tang, Liang Wang, Zhibin Zhao, Xiaolei Yang, Fei Yang, Junmin Wu |
|
17:00 |
15 |
154 |
Yuxin Ge, Yayong Yang, Cheng Qian, Zhiqiang (Jack) Wang, Yong Kang |
|
17:15 |
15 |
62 |
Zhikun Wang, Saijun Mao, Shuhao Yang, Wenyu Li, Yujie Ding, Keqiu Zeng |
Aug 27, 2021 08:30~11:30
|
S5: WBG Device Design |
|||
|
Chair: Lin Liang, Huazhong University of Science and Technology / Yanqing Wu, Peking University |
|||
|
Start |
Duration |
ID |
Title |
|
08:30 |
15 |
48 |
Li Liu, Na Ren, Jiupeng Wu, Zhengyun Zhu, Hongyi Xu, Qing Guo, Kuang Sheng |
|
08:45 |
15 |
12 |
Hao Lu, Xiaohua Ma, Bin Hou, Ling Yang, Yue Hao |
|
09:00 |
15 |
69 |
Multiple UIS Ruggedness of 1200V Asymmetric Trench SiC MOSFETs Jiayue Liu, Xiaochuan Deng, Xu Li, Xuan Li, Zhiqiang Li, Hongling Lu |
|
09:15 |
15 |
105 |
A Novel GaN MIS-HEMT with a Source-connected Clamp Electrode for Suppressing Short-channel effect Yijun Shi, Shan Wu, Hongyue Wang, Zhiwei Fu, Si Chen, Bin Zhou |
|
09:30 |
15 |
107 |
Resonant Gate Driver with Wide Range Adjustment of Driving Speed Hao Peng, Han Peng, Qiaozhi Yue |
|
9:45 |
15 |
Coffee break |
|
|
S6: Device Gate Drivers |
|||
|
Chair: Zicheng Liu, Huazhong University of Science and Technology / Hanyu Wang, Hefei University of Technology |
|||
|
10:00 |
15 |
84 |
Optimized Parameter Selection Method of Driving Circuit for SiC MOSFET Haihong Qin, Sixuan Xie, Feifei Bu, Shishan Wang, Wenming Chen, Dafeng Fu |
|
10:15 |
15 |
46 |
Analysis of Crosstalk and Suppression Methods for Enhancement-Mode GaN HEMTs in A Phase-Leg Topology Haihong Qin, Wenlu Wang, Feifei Bu, Zihe Peng, Ao Liu, Song Bai |
|
10:30 |
15 |
156 |
Cheng Qian, Zhiqiang (Jack) Wang, Yong Kang |
|
10:45 |
15 |
64 |
A Review of the Crosstalk Suppression Methods for SiC MOSFETs in the Phase-leg Circuit Configuration Yujie Ding, Saijun Mao, Zhikun Wang, Shuhao Yang, Wenyu Li, Keqiu Zeng |
|
11:00 |
15 |
136 |
Nathan M. Ellis, Rahul Iyer, Robert C. N. Pilawa-Podgurski |
Aug 27, 2021 14:00~17:00
|
S7: WBG Power Converters |
|||
|
Chair: Hongfei Wu, Nanjing University of Aeronautics and Astronautics / Dong Jiang, Huazhong University of Science and Technology |
|||
|
Start |
Duration |
ID |
Title |
|
14:00 |
15 |
20 |
Soft-Switching Resonant Active Clamp Flyback based-on GaN HEMTs for MHz High Step-Up Applications Wuji Meng, Lin Li, Fanghua Zhang, Jianjun Shu |
|
14:15 |
15 |
122 |
Design of a 10kW, High-Frequency Dual Active Bridge Converter Using SiC Devices Haoyuan Jin, Huaqing Li, Junduo Wen, Chengzi Yang, Hang Kong, Laili Wang |
|
14:30 |
15 |
42 |
Yueshi Guan, Zhaoliang Wen, Yijie Wang, Dianguo Xu |
|
14:45 |
15 |
111 |
Comparison of Two Types of Single Gate Drivers for SiC MOSFET Stacks in Flyback Converters Rui Wang, Hongbo Zhao, Stig Munk-Nielsen |
|
15:00 |
15 |
119 |
Review of soft-switching high-frequency GaN-based single-phase Bridgeless Rectifier Yunfeng Liu, Ziwei Ouyang, Michael A.E. Andersen |
|
15:15 |
15 |
78 |
Chao Liu, Zhe Zhang, Michael A. E. Andersen |
|
15:30 |
15 |
Coffee break |
|
|
S8: WBG Device Characteristic and Converter Modeling |
|||
|
Chair: Zhang Yu, Huazhong University of Science and Technology / Han Peng, Huazhong University of Science and Technology |
|||
|
15:45 |
15 |
148 |
Modeling and Design of A 10MHz Class Φ2 Inverter Yongzhi Liu, Yiyang Yan, JiaJia Guan, Cai Chen, Yu Chen, Yong Kang |
|
16:00 |
15 |
49 |
A Real-Time Self-Learning High Performance Control for Megahertz GaN-based DC-DC Converter Jing Chen, Yu Chen, Yong Kang |
|
16:15 |
15 |
45 |
Hongyi Xu, Chaobiao Lin, Na Ren, Xinhui Gan, Liping Liu, Zhengyun Zhu, Li Liu, Qing Guo, Jianxin Ji, Kuang Sheng |
|
16:30 |
15 |
67 |
Single Pulse Short-Circuit Failure Mechanism of 1200V Asymmetric Trench SiC MOSFETs Zhaoxiang Wei, Jiaxing Wei, Xiaowen Yan, Hua Zhou, Hao Fu, Siyang Liu, Weifeng Sun |
|
16:45 |
15 |
141 |
The Influence of Dynamic Threshold Voltage Drift on Third Quadrant Characteristics of SiC MOSFET Lei Tang, Huaping Jiang, Hua Mao, Zebing Wu, Xiaohan Zhong, Xiaowei, Qi, Li Ran |
Industry Session
Aug 27, 2021 08:30~11:15
|
IS1-Industry Session 1 |
||
|
Chairs: Feng Zhang, Xiamen University | Sheng Zheng, Huawei Technologies |
||
|
Start |
Duration |
Title |
|
08:30 |
25 |
SiC Power Modules for Rail Traction & SST Applications Siqing Lu, Mitsubishi Electric |
|
08:55 |
25 |
TMR-Based Current Sensor with Core-less Design for High-frequency Current Detection Xiaopeng Xu, Ningbo Sinomags Technology Co., Ltd. |
|
09:20 |
25 |
New Powder Core Material and Its New Applications Yunfan Zhang, POCO Holding Co., Ltd. |
|
9:45 |
15 |
Break |
|
IS2-Industry Session 2 |
||
|
Chairs: Chengzhan Li, CRRC | Tong Wu, On Semiconductor |
||
|
10:00 |
25 |
Evaluation of Dynamic On-Resistance of InnoGaN and its Application for High-Density Power Converters Shan Yin, Innoscience (Zhuhai) Technology Co.,Ltd. |
|
10:25 |
25 |
Power Devices and Power Supply Test Solution Yucai Liu, Guangzhou ZHIYUAN Electronics Co., Ltd. |
|
10:50 |
25 |
The Latest Testing Methods and Solutions in Wide BandGap Wanner Huang, Tektronix (China) Co., Ltd. |
Poster Session
Aug 27, 2021 12:00~13:30
|
P1-WBG Devices |
|||
|
Chair: Guorong Zhu, Wuhan University of Technology / Zhen Tian, Wuhan University |
|||
|
Start |
Duration |
ID |
Title |
|
12:00 |
5 |
115 |
Siyu Deng, Xiaorong Luo, Jie Wei, Yanjiang Jia, Tao Sun, Lufan Xi, Zhuolin Jiang, Kemeng Yang, Qinfeng Jiang, Bo Zhang |
|
12:05 |
5 |
101 |
Low Roughness SiC Trench Formed by ICP Etching with Sacrificial Oxidation and Ar Annealing Treatment Changwei Zheng, Zhicheng Wang, Shasha Jiao, Qijun Liu, Yehui Luo, Jieqin Ding, Chengzhan Li |
|
12:10 |
5 |
85 |
The influence of hydrogen annealing on minority carrier lifetimes in 4H-SiC Ruijun Zhang, Rongdun Hong, Jiafa Cai, Xiaping Chen, Dingqu Ling, Mingkun Zhang, Shaoxiong Wu, Yuning Zhang, Jingrui Han, Zhengyun Wu, Feng Zhang |
|
12:15 |
5 |
33 |
Deep energy levels investigation on high resistivity bulk monocrystalline diamond Yutian Wang, Qian Sun, Fangzhou Zhao, Hui Guo |
|
12:20 |
5 |
158 |
650V 4H-SiC VDMOS with Additional N Region_A Simulation Study Xiuxiu Gao, Chengzhan Li, Xiaoping Dai |
|
12:25 |
5 |
127 |
A Novel SiC Trench MOSFET Structure with Enhanced Short Circuit Robustness Chongyu Jiang, Hongyi Xu, Na Ren, Qing Guo, Kuang Sheng |
|
12:30 |
5 |
92 |
Comparison of Gate Leakage Current in AlGaN/GaN HEMTs with Different Passivation Technology Jielong Liu, Yuwei Zhou, Minhan Mi, Jiejie Zhu, Siyu Liu, Qing zhu, Pengfei Wang, Hong Wang, Xiaohua Ma, Yue Hao |
|
12:35 |
5 |
32 |
Off-State Negative Differential Capacitance in Low-Temperature AlGaN/GaN HFETs Siyu Liu, Jiejie Zhu, Jingshu Guo, Minhan Mi, Xiaohua Ma, Yue Hao, Jielong Liu, Yilin Chen |
|
12:40 |
5 |
114 |
Yumeng Cai, Hao Xu, Peng Sun, Zhibin Zhao, Zhong Chen |
|
12:45 |
5 |
102 |
Zicheng Yu, Chi Sun, Xiaoyu Ding, Xing Wei, Weining Liu, Li Zhang, Zhang Chen, Guohao Yu, Baoshun Zhang |
|
12:50 |
5 |
24 |
Fei Yang, Lixin Tian, Zhanwei Shen, Guoguo Yan, Xingfang Liu, Wanshun Zhao, Lei Wang, Guosheng Sun, Junmin Wu, Feng Zhang, Yiping Zeng |
|
P2-WBG Device Packaging |
|||
|
Chair: Yi Liu, Huazhong University of Science and Technology / Qingqing He, Wuhan University of Technology |
|||
|
Start |
Duration |
ID |
Title |
|
12:00 |
5 |
103 |
Kaixuan Li, Xingwen Li, Boya Zhang, Haotao Ke |
|
12:05 |
5 |
97 |
Design and Research on Package Insulation of Highvoltage Silicon Carbide Module Yang Zhou, Ling Sang, Xinling Tang, Hao Shi |
|
12:10 |
5 |
35 |
Power Semiconductor IGBT Packaging Technology and Reliability Yameng Sun, Shizhao Wang, Lianghao Xue, Zheng Feng, Rui Li, Sheng Liu |
|
12:15 |
5 |
124 |
Evaluating Switching Performance of GaN HEMT Using Analytical Modeling Yingzhe Wu, Shan Yin, Hui Li, Minghai Dong, Xi Liu, Yuhua Cheng |
|
12:20 |
5 |
83 |
Wei Mu, Binyu Wang, Shenghe Wang, Haoyuan Jin, Huaqing Li, Laili Wang |
|
12:25 |
5 |
79 |
Shaolin Yu, Jianing Wang, Xing Zhang, Yuanjian Liu, Zhaoyang Wei |
|
12:30 |
5 |
120 |
Pengyuan Ren, Wenjie Chen, Xingwei Huang, Yue Cao, Yuxuan Chen, Xu Yang |
|
12:35 |
5 |
28 |
GaN HEMT with current-driven gate and its driving circuit design Owen Song, Rafael Garcia |
|
12:40 |
5 |
44 |
Ultra-thin Coupled Inductor for a GaN-Based CRM Buck Converter Ming Hua, Junyu Chen, Guolin Xu, Hongfei Wu |
|
12:45 |
5 |
155 |
Cheng Qian, Neng Wang, Yayong Yang, Zhiqiang(Jack)Wang, Yong Kang |
|
12:50 |
5 |
145 |
Feng Wang, Xuehua Wang, Xinbo Ruan |
|
P3-WBG Device Modeling |
|||
|
Chair: Zhijian Fang, China University of Geosciences / Hao Feng, Chongqing University |
|||
|
Start |
Duration |
ID |
Title |
|
12:00 |
5 |
71 |
Dynamic gate leakage current of p-GaN Gate AlGaN/GaN HEMT under positive bias Conditions Yu Sun, Maojun Wang, Wen Lei, Chun Han |
|
12:05 |
5 |
70 |
Design, Fabrication and Characterization of 6.5 kV/100A 4H-SiC PiN Rectifier Mengling Tao, Xiaochuan Deng, Rui Hu, Xuan Li, Zhiqiang Li, Hongling Lu |
|
12:10 |
5 |
129 |
Analytical Averaged Loss Model of a Three-level NPC-type Converter With SiC Devices Xinyue Guo, Yue Xie, Cai Chen, Yong Kang |
|
12:15 |
5 |
10 |
Huaqing Li, Chengzi Yang, Longyang Yu, Haoyuan Jin, Xingshuo Liu, Laili Wang |
|
12:20 |
5 |
140 |
The Influence of Gate Resistances on the Turn-on Behaviors of Si/SiC Hybrid Switch Xiaofeng Jiang, Huaping Jiang, Hongyu Yu, Jinhong Jiang, Hao Feng, Hua Mao, Lei Tang, Xiaohan Zhong, Li Ran |
|
12:25 |
5 |
3 |
Quan Zheng, Cai Chen, Yong Kang |
|
12:30 |
5 |
68 |
Wenyu Li, Saijun Mao, Zhikun Wang, Shuhao Yang, Yujie Ding, Keqiu Zeng |
|
12:35 |
5 |
135 |
Tianxiang Yin, Lei Lin, Yihong Huang, Zuochen Liu, Kaiyuan Jing |
|
12:40 |
5 |
73 |
A Survey on Modeling of SiC IGBT Yuwei Wu, Laili Wang, Jianpeng Wang, Feng Zhang |
|
12:45 |
5 |
61 |
Automated SiC MOSFET Power Module Switching Characterization Test Platform Shuhao Yang, Saijun Mao, Zhikun Wang, Xi Lu, Hansen Chen, Keqiu Zeng |
|
12:50 |
5 |
6 |
Modeling and Suppression of Crosstalk of SiC MOSFET in Bidirectional Buck/Boost Converter Hao Zhang, Runquan Meng, Dingbang Zhang, Yingying Ding, Ziniu Wu |
|
12:55 |
5 |
22 |
A Lossless and Passive Voltage Spikes Clamping Circuit for SiC HERIC Inverter Yong Li, Shanxu Duan, Qiqi Li |
| 13:00 | 5 | 18 |
Investigation on Parameter Extraction for An Improved Fourier-Series-Based NPT IGBT Model Yifei Ding, Xin Yang, Jun Wang, Chunming Tu, Guoyou Liu |
|
P4-WBG Device Reliability |
|||
|
Chair: Yi Liu, Wuhan University of Technology / Donghai Zhu, Huazhong University of Science and Technology |
|||
|
Start |
Duration |
ID |
Title |
|
12:00 |
5 |
38 |
Comparison of the Influence of Reverse Conduction on EMI of WBG and Si Devices Ru Zhang, Wenjie Chen, YuXuan Chen, Yue Cao, Ruitao Yan, Xu Yang |
|
12:05 |
5 |
153 |
Jiawei Li, Cheng Qian, Zhiqiang (Jack) Wang, Yong Kang |
|
12:10 |
5 |
17 |
Kexin Gao, Yiqiang Chen, Shuaizhi Zheng, Xinbing Xu, Min Liao, Meng Lu |
|
12:15 |
5 |
138 |
Single-Pulse Avalanche Failure Characterization of Single and Paralleled SiC MOSFETs Hua Mao, Huaping Jiang, Guanqun Qiu, Yifu Zhang, Xiaohan Zhong, Hao Feng, Li Ran |
|
12:20 |
5 |
128 |
Ruizhou Xue, Xuejun Pei, Chunyu Yang, Yi Yu |
|
12:25 |
5 |
77 |
Influence of CucorAl wire bonding on reliability of SiC devices Chao Fang, Xiang Tang, Guangyuan Qin, Haotao Ke, Yibo Wu, Jing Zhang, Guiqin Chang, Haihui Luo |
|
12:30 |
5 |
99 |
Short-circuit Protection Circuit of SiC MOSFET Based on Drain-source Voltage Integral Hong Li, Yuting Wang, Zhidong Qiu, Zuoxing Wang, Xiaofei Hu, Jia Zhao |
|
12:35 |
5 |
23 |
Design of Aging Test System for SiC MOSFET Modules Chaoyue Shen, Fei Wang, Zhenye Wang, Zhong Ye |
|
12:40 |
5 |
53 |
Degradation mechanism of AlGaN/GaN HEMT based on high temperature reverse bias stress Meng Lu, Yiqiang Chen, Min Liao, Chang Liu, Shuaizhi Zheng, Kexin Gao |
|
12:45 |
5 |
58 |
Jianwei Lv, Chi Zhang, Cai Chen, Yong Kang |
|
12:50 |
5 |
82 |
EMI Noise Reduction in GaN-based Full-bridge LLC Converter With Planar Transformer Yue Cao, Yuxuan Chen, Xingwei Huang, Pengyuan Ren, Wenjie Chen, Xu Yang |
|
P5-WBG Device Applications |
|||
|
Chair: Song Xiong, Wuhan University of Technology / Deliang Wu, Shanghai University |
|||
|
Start |
Duration |
ID |
Title |
|
12:00 |
5 |
112 |
Design of a High Power Density Bidirectional AC/DC Converter Based on GaN Jiajia Guan, Zhiwei Wang, Ziyan Tang, Jianwei Lv, Cai Chen, Yong Kang |
|
12:05 |
5 |
131 |
Haowen Chen, Changsong Chen, Mengjie Jiang, Shuran Jia, Xuezheng Huang |
|
12:10 |
5 |
75 |
A GaN-based High Power-density Power Optimizer for Solar-powered Aircraft Applications Peng Chen, Tao Liu, Yujie Cheng, Hongfei Wu, Jianxin Zhu |
|
12:15 |
5 |
15 |
ChengZi Yang, Huaqing Li, Haoyuan Jin, Longyang Yu, Laili Wang, Yunqing Pei |
|
12:20 |
5 |
87 |
Improved One Cycle Control for Three-Phase Three-Wire VIENNA Rectifier Junnan Gu, Xikun Chen, Ruiying Li, Borui Liu, Ni Zheng |
|
12:25 |
5 |
121 |
Mingjie Liu, Xuehua Wang, Jiangtao Xu |
|
12:30 |
5 |
36 |
Research on A Novel Parallel Resonant DC Link Soft-switching Inverter Based on SiC MOSFET Si Li, Ming Yang, Yu Ma, Dianguo Xu |
|
12:35 |
5 |
88 |
Research on strategy of parallel wide range bidirectional DC DC converter Zehui Peng, Xikun Chen, Borui Liu, Yongjian Chen, Junnan Gu, Ruiying Li |
|
12:40 |
5 |
93 |
Soft Precharging Method for Four-Level Hybrid-Clamped Converter Yihui Zhao, Jianyu Pan, Yao Luo, Jian Li |
|
12:45 |
5 |
110 |
Active Magnetic Bearing Amplifier Design based on SiC Devices Gang Cao, Hongbo Sun, Gao Yang, Dong Jiang |
|
12:50 |
5 |
94 |
Design and Verification of Gate Driver for 6.5 kV SiC MOSFET Module Yijian Wang, Lin Liang, Hai Shang, Lubin Han |
|
12:55 |
5 |
41 |
Xiang Lin, Shumin Ding, Deliang Wu, Jian Luo |
|
13:00 |
5 |
4 |
Power Cycling Capabilities of Bond Buffer Technologies for Wide Bandgap Power Devices Nan Jiang, Haitao Zhang, Jianing Wang, Chengguo Li, Jinhao Cai |
|
13:05 |
5 |
139 |
DC Transform Circuit Design Based on Multiplier Rectification Penghui Yin, Xuehua Wang, Xinbo Ruan |
|
13:10 |
5 |
63 |
LLC resonant converter based on trench gate SiC MOSFET Yuming Zhou, Jinkun Chu, Jiahui Zhou |
|
13:15 |
5 |
27 |
Fractional-Order Model Predictive Control of SiC PFC Converter Qihui Fu, Zishun Peng, Zipeng Ke, Huimin Quan, Zhenxing Zhao, Zeng Liu, Yuxing Dai, Jun Wang |
|
13:20 |
5 |
57 |
Mode switchover strategy for multi-port energy router based on the state flow diagram Jingwen Zheng, Zhiguo Wei, Zaixun Ling, Yu Guo, Ping Xiong, Yiqun Kang |
|
13:25 |
5 |
72 |
An Integrated GaN-Based Power Module Based on the Cooling-System-Inductor Structure Longyang Yu, Wei Mu, Huaqing Li, Yang ChengZi, Chenya Wang, Laili Wang |
|
13:30 |
5 |
14 |
An Integrated Buck-Boost Converter with SRC for Wide Input Voltage Yanqing Wang, Yutao Lou, Xiang Guo, Changle Xu, Xudong Zou, Yong Kang |