Comparison Study on Short Circuit Capability of 1.2 kV Split-Gate MOSFET and Split-Source MOSFET with Integrated JBS Diode
ID：105
Submission ID：45 View Protection：ATTENDEE
Updated Time：2021-07-21 20:06:13 Hits：794
Oral Presentation
Start Time：2021-08-27 16:15 （Asia/Shanghai）
Duration：15min
Session：[Room2] Oral Session 2 » [S7&S8] WBG Power Converters & WBG Device Characteristic and Converter Modeling
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Abstract
In this work, the JBS integrated MOSFETs with two kinds of integration, i.e., JBS cell integrated in source region (named Split-Source MOSFET) and JBS cell integrated in gate region (named Split-Gate MOSFET) are investigated and the most important reliability aspect, i.e., short circuit robustness is compared via experiment and simulation. The device failure mechanisms are studied and the method of improving short circuit ruggedness of the JBS integrated MOSFET is proposed.
Keywords
SiC MOSFET,Integrated JBS,Short circuit
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