Design and fabrication of low pinch-off voltage 700V lateral 4H-SiC MESFET with thin RESURF layer
ID：107
Submission ID：37 View Protection：ATTENDEE
Updated Time：2021-07-21 20:06:14 Hits：440
Oral Presentation
Start Time：Pending （Asia/Shanghai）
Duration：Pending
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Abstract
The objective of this work is to develop lateral 4H-SiC power devices that could be integrated into a monolithic high voltage power IC (HVIC) chip using thin RESURF layer. Junction isolation structure between neighboring devices can be easily achieved through mesa etch. This paper proposes a high breakdown voltage lateral RESURF MESFET structure and edge termination technique using epitaxially grown thin RESURF wafer.
Keywords
4H-SiC,RESURF,Lateral,MESFET,TCAD simulation,3D simulation
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