Characteristics of SiC MOSFET in a Wide Temperature Range
ID：110
Submission ID：26 View Protection：ATTENDEE
Updated Time：2021-07-21 20:06:16 Hits：759
Oral Presentation
Start Time：2021-08-27 10:45 （Asia/Shanghai）
Duration：15min
Session：[Room1] Oral Session 1 » [S1&S2] WBG Device Modeling, Simulation and Reliability
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Abstract
In order to expand the application of SiC MOSFET in a wide temperature range, the performance of SiC MOSFET from 25 °C to 425 °C is studied in this paper by taking the 1.2 kV QPM3-1200-0013D as an example. Different from the device characteristics given in the data sheet or previous articles at only three discrete temperatures or temperatures below 250 °C, the temperature-dependent static characteristics of SiC MOSFET are remeasured and nonlinearly characterized in a wide temperature
range in this paper. In addition, considering the improvement effect of SiC Schottky barrier diode on the reliability of SiC MOSFET’s body diode, the temperature-dependent static characteristics of SiC Schottky barrier diode are also analyzed in this paper, which provides guidance for the high-temperature pre-design and application of SiC MOSFET.
Keywords
SiC MOSFET,Schottky barrier diode (SBD),High Temperature
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