Development of High Voltage SiC Power MOSFETs
ID:122 View Protection:ATTENDEE Updated Time:2021-07-26 13:34:54 Hits:618 Invited speech

Start Time:2021-08-26 15:10 (Asia/Shanghai)

Duration:40min

Session:[K] Plenary Session » [K2] Plenary Session 2

No files

Abstract
Development of High Voltage SiC Power MOSFETs
Keywords
Speaker
Song Bai
State Key Laboratory of Wide Bandgap Semiconductor Power Electronic Devices

Comment submit
Verification code Change another
All comments