With the continuous development of power electronics technology, the performance requirements for high-power semiconductor devices are also increasing, such as improving device rated power, reducing device volume, increasing power density and increasing working temperature. In this paper, the effects of Al bonding wire and CucorAl bonding wire on the power cycling capability of SiC devices are studied by experiment and numerical simulation. The power cycling fatigue life of different bonding wires was obtained through the power cycling test of SiC substrate bonded by Al wires and CucorAl wires. The experimental result shows that the power cycling ability of CucorAl wires is higher than that of Al wires.

Wire Bond,SiC,power cycling