Adaptive Digital Technique Assisted Hard Switching Fault Detection for SiC MOSFETs
ID：88
Submission ID：96 View Protection：ATTENDEE
Updated Time：2021-08-14 09:41:54
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Oral Presentation
Start Time：2021-08-27 15:00 （Asia/Shanghai）
Duration：15min
Session：[Room1] Oral Session 1 » [S3&S4] WBG Device Applications, Package Design & Analysis
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Abstract
This paper presents a Hard Switching Fault (HSF) detection technique for SiC MOSFETs. The reliability of SiC MOSFETs under short circuit conditions is a crucial concern and can lead to failure. The proposed method uses only the device voltage sensing to detect the HSF condition. Instead of fixed blanking time present in the desaturation method, the proposed method adaptively changes the blanking time during every switching cycle. By this, faster detection of the shoot-through event can be achieved and it can reduce the magnitude of the fault peak current. The experimental verification of the proposed method was carried with a discrete 1kV, 32A SiC MOSFET. The results show satisfactory operation of the proposed method,where the HSF event is detected within few tens of nanoseconds.
Keywords
Short-circuit test;HSF;Hard Swiching Fault;SiC MOSFET;Adaptive Time
Speaker
Saravanan Dhanasekaran
Research Scholar Indian Institute of Technology MadrasI received the B.E degree in Electrical and Electronics Engineering from Sri Sivasubramaniya Nadar College of Engineering, Chennai, India in 2017. I am currently working toward the M.S degree in power electronics with the ElectricalDepartment, Indian Institute of Technology, Madras, India. My research interest includes the Active Gate Drivers for wide bandgap devices in high-power converters.
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