A well-established unified physics-based IGBT compact model has been implemented in LTspice, a SPICE simulator from Analog Devices which is a freely available and well-established circuit simulator. A 12.5kV n-channel SiC IGBT, a 13-kV p-channel SiC IGBT, and a 1200V/60A field stop Si IGBT from IXYS have been used in this paper for model verification. The parameters have been extracted with ICCAP software using LTspice as an external simulator. This model unifies both Si and SiC IGBT models for both n and p-channel devices that add to the flexibility of a circuit designer. This paper presents an LTspice implementation of a model published in [3]. It provides a very accurate description of the MOS channel, bipolar transistor, and nonlinear capacitances for both Si and SiC IGBTs. It also includes temperature scaling features, along with a solid but simple datasheet-driven parameter extraction method.

Simulation,Insulated Gate Bipolar Transistor (IGBT),LTspice,Semiconductor device characterizations and Modeling.,power electronic devices