Optimized Parameter Selection Method of Driving Circuit for SiC MOSFET
ID：91
Submission ID：84 View Protection：ATTENDEE
Updated Time：2021-08-21 16:04:06
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Oral Presentation
Start Time：2021-08-27 10:00 （Asia/Shanghai）
Duration：15min
Session：[Room2] Oral Session 2 » [S5&S6] WBG Device Design and Gate Drivers
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Abstract
In order to reduce switching time and on resistance of SiC MOSFET, higher voltage and lower RG are often selected in driving circuit, but also these factors affect the gate reliability. Therefore, this paper has proposed a method to select the parameters of driving circuit. Firstly, the driving equivalent circuit has been analyzed and the constraints between parameters has been given. Sencondly, the parameters have been calculated with consideration of gate safety and the influence of parasitic parameters have been analyzed. Finally, by building a experimental platform, the research focused on the optimized parameter selection has been carried out, which can verify the feasibility of the method.
Keywords
SiC MOSFET,gate driving circuit,parameter selection
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