2021-08-27 08:30 ~ 11:30 (Asia/Shanghai)
ZOOM Conference / WIPDA-Asia 2021 ROOM 2
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Timetable
WBG Device Design
Chair: Lin Liang, Huazhong University of Science and Technology / Yanqing Wu, Peking University
08-27
08:30~08:45
08-27
08:45~09:00
08-27
09:00~09:15

Multiple UIS Ruggedness of 1200V Asymmetric Trench SiC MOSFETs

Wei Huang，University of Electronic Science and Technology of China
08-27
09:15~09:30

A Novel GaN MIS-HEMT with a Source-connected Clamp Electrode for Suppressing Short-channel effect

Yijun Shi，The Fifth Institute of Electronics, Ministry of Industry and Information Technology
08-27
09:30~09:45

Resonant Gate Driver with Wide Range Adjustment of Driving Speed

Qiaozhi Yue，Huazhong University of Science and Technology
08-27
09:45~10:00
Coffee break
Device Gate Drivers
Chair: Zicheng Liu, Huazhong University of Science and Technology / Hanyu Wang, Hefei University of Technology
08-27
10:00~10:15

Optimized Parameter Selection Method of Driving Circuit for SiC MOSFET

Haihong Qin，Nanjing University of Aeronautics and Astronautics
08-27
10:15~10:30

Analysis of Crosstalk and Suppression Methods for Enhancement-Mode GaN HEMTs in A Phase-Leg Topology

Haihong Qin，Nanjing University of Aeronautics and Astronautics
08-27
10:30~10:45
08-27
10:45~11:00
08-27
11:00~11:15
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