2021-08-27 08:30 ~ 11:30 (Asia/Shanghai)
ZOOM Conference / WIPDA-Asia 2021 ROOM 1
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Timetable
Device Modeling and Simulation
Chair: Yu Chen, Huazhong University of Science and Technology / Xiaochuan Deng, University of Electronic Science and Technology of China
08-27
08:30~08:45
08-27
08:45~09:00
08-27
09:00~09:15
08-27
09:15~09:30
08-27
09:30~09:45
Coffee Break
WBG Device Reliability
Chair: Meng Huang, Wuhan University / Qing Guo, Zhejiang University
08-27
09:45~10:00

Analysis of GaN HEMT Degradation under RF Overdrive Stress

YuHan Xie，；South China University of Technology
08-27
10:00~10:15

Analysis of the influence of vibration and thermal vibration coupling on the power module

JiaJia Guan，Huazhong University of Science and Technology
08-27
10:15~10:30
08-27
10:30~10:45

Failure Analysis of 200V p-GaN HEMT under Unclamped Inductive Switching Conditions

Xuan Li，University of Electronic Science and Technology of China
08-27
10:45~11:00

Characteristics of SiC MOSFET in a Wide Temperature Range

Mengyu Zhu，Xi'an Jiaotong University
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