Timetable of IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WIPDA-ASIA 2021)

IEEE Workshop on Wide Bandgap Power Devices
and Applications in Asia (WiPDA Asia 2021)

Aug. 25-27, 2021 Wuhan, China

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Timezone：Asia/Shanghai

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Day 3,Aug. 27, 2021Friday

S1&S2	Start	End	Duration	ID	Title
S1&S2	WBG Device Modeling, Simulation and Reliability@Oral Session 1 2021-08-27 08:30 ~ 11:30 ZOOM Conference Enter meeting room Video CONFERENCE Oral Session Timetable V13 Updated：2021-09-01 08:33:01
Device Modeling and Simulation
Chair: Yu Chen, Huazhong University of Science and Technology / Xiaochuan Deng, University of Electronic Science and Technology of China
08:30	08:45	15	1	Datasheet Driven Turn Off Overvoltage Prediction for Silicon Carbide Power MOSFETs Based on Theoretical Analysis Cheng Qian/Huazhong University of Science and Technology Oral Presentation
08:45	09:00	15	73	An Automated Electro-Thermal-Mechanical Co-Simulation Methodology Based on PSpice-MATLAB-COMSOL for SiC Power Module Design Yayong Yang student/Huazhong University of Science and Technology Oral Presentation
09:00	09:15	15	99	Comprehensive Investigations on Paralleling Operation of SiC MOSFETs based on Subcircuit Model in MATLAB/SIMULINK Yuqi Wei/UNIVERSITY OF ARKANSAS Oral Presentation
09:15	09:30	15	89	A Compact Model for Si/SiC IGBT in LTspice with Experimental Validation Md Maksudul Hossain Graduate Research As/UNIVERSITY OF ARKANSAS Oral Presentation
09:30	09:45	15		Coffee Break
WBG Device Reliability
Chair: Meng Huang, Wuhan University / Qing Guo, Zhejiang University
09:45	10:00	15	114	Analysis of GaN HEMT Degradation under RF Overdrive Stress YiQiang Chen/The No.5 Electronics Research Institute of the Ministry of Industry and Information Technology；YuHan Xie/,South China University of Technology Oral Presentation
10:00	10:15	15	116	Analysis of the influence of vibration and thermal vibration coupling on the power module JiaJia Guan/Huazhong University of Science and Technology Oral Presentation
10:15	10:30	15	85	Investigation of the Insulation Failure of Power Modules by Observation of Electrical Trees Kaixuan Li Doctoral Candidate/XJTU Oral Presentation
10:30	10:45	15	86	Failure Analysis of 200V p-GaN HEMT under Unclamped Inductive Switching Conditions Xuan Li/University of Electronic Science and Technology of China Oral Presentation
10:45	11:00	15	110	Characteristics of SiC MOSFET in a Wide Temperature Range Mengyu Zhu/Xi'an Jiaotong University Oral Presentation

S3&S4	Start	End	Duration	ID	Title
S3&S4	WBG Device Applications, Package Design & Analysis@Oral Session 1 2021-08-27 14:00 ~ 17:30 ZOOM Conference Enter meeting room Video CONFERENCE Oral Session Timetable V13 Updated：2021-09-01 08:33:01
WBG Device Applications
Chair: Xuehua Wang, Huazhong University of Science and Technology / Haoze Luo, Zhejiang University
14:00	14:15	15	82	A Predictive Method for Switching Time of Nanosecond Pulsed Power System of Ohmic Loads Using SiC MOSFETs Xin Li/Naval University of Engineering Oral Presentation
14:15	14:30	15	90	Analysis of an Output Series High Voltage Gain Impedance Source Circuit Based on SiC Switch Qing Cheng/China,School of Electrical Engineering and Automation, Harbin Institute of Technology, Harbin Oral Presentation
14:30	14:45	15	80	Homogeneous-Flux Transmitter Coil Design with Improved Position Tolerance Yunfeng Liu/Department of Electrical Engineering, Technical University of Denmark Oral Presentation
14:45	15:00	15	72	An Accurate Analytical Model for Motor Terminal Overvoltage Prediction and Mitigation in SiC Motor Drives Neng Wang/Huazhong University of Science and Technology Oral Presentation
15:00	15:15	15	88	Adaptive Digital Technique Assisted Hard Switching Fault Detection for SiC MOSFETs Saravanan Dhanasekaran Research Scholar/Indian Institute of Technology Madras Oral Presentation
15:15	15:30	15		Coffee Break
WBG Device Package Design & Analysis
Chair: Jianing Wang, Hefei University of Technology / Cai Chen, Huazhong University of Science and Technology
15:30	15:45	15	109	Comparison Study of Parasitic Inductance, Capacitance and Thermal Resistance for Various SiC Packaging Structures Yifan Zhang/Huazhong University of Science and Technology Oral Presentation
15:45	16:00	15	93	A Layout Optimization Method to Reduce Commutation Inductance of Multi-Chip Power Module Based on Genetic Algorithm Yu Zhou PhD Student/Zhejiang University Oral Presentation
16:00	16:15	15	77	A High Power Density Chip-on-Chip Gan-based Module with Ultra-Low Parasitic Inductance Yi Zhang/Huazhong University of Science and Technology,State Key Laboratory of Advanced Electromagnetic Engineering and Technology Oral Presentation
16:15	16:30	15	100	15kV Press Pack SiC IGBT yujie du/,Global Energy Interconnection Research Institute Co.,ltd Oral Presentation
16:30	16:45	15	71	Analysis of Dynamic Current Balancing in Multichip SiC Power Modules Based on Coupled Parasitic Network Model Yuxin Ge/Huazhong University of Science and Technology Oral Presentation
16:45	17:00	15	98	Power Loop Inductance Extraction with High Order Polynomial Fitting Algorithm for SiC MOSFET Power Module Characterization Zhikun Wang/Fudan University Oral Presentation

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