Analysis of the influence of vibration and thermal vibration coupling on the power module
JiaJia Guan Huazhong University of Science and Technology
Room1 /S1&S2 2021-08-27 10:00 ~ 10:15
ATTENDEE Oral presentation
Improved Breakdown Characteristics for AlN/GaN/InGaN Coupling Channel HEMTs with SiNx Removal and Backfill Technique
Hao Lu School of Microelectronics; Xidian University
Room2 /S5&S6 2021-08-27 08:45 ~ 09:00
ATTENDEE Oral presentation
Analysis of GaN HEMT Degradation under RF Overdrive Stress
YiQiang Chen The No.5 Electronics Research Institute of the Ministry of Industry and Information Technology;YuHan Xie South China University of Technology
Room1 /S1&S2 2021-08-27 09:45 ~ 10:00
ATTENDEE Oral presentation
Soft-Switching Resonant Active Clamp Flyback based-on GaN HEMTs for MHz High Step-Up Applications
Wuji Meng Nanjing University of Aeronautics and Astronautics
Room2 /S7&S8 2021-08-27 14:00 ~ 14:15
ATTENDEE Oral presentation
Effects of p-type Islands Configuration on the Electrical Characteristics of the 4H-SiC Trench MOSFETs with Integrated Schottky Barrier Diode
Zhanwei Shen Chinese Academy of Sciences;Institute of Semiconductors
Room2 Pending
PUBLIC Poster Presentation
Impacts of Power Level on Parasitic Capacitance in Copper-Foiled Medium-Voltage Inductors
Hongbo Zhao Aalborg University
Room1 Pending
ATTENDEE Oral presentation
Characteristics of SiC MOSFET in a Wide Temperature Range
Mengyu Zhu Xi'an Jiaotong University
Room1 /S1&S2 2021-08-27 10:45 ~ 11:00
ATTENDEE Oral presentation
Comparison Study of Parasitic Inductance, Capacitance and Thermal Resistance for Various SiC Packaging Structures
Yifan Zhang Huazhong University of Science and Technology
Room1 /S3&S4 2021-08-27 15:30 ~ 15:45
ATTENDEE Oral presentation
Design and fabrication of low pinch-off voltage 700V lateral 4H-SiC MESFET with thin RESURF layer
Atsushi Shimbori Research Assistant University of Texas at Austin
Room2 Pending
ATTENDEE Oral presentation
A Single-Stage Modular DCX with High Voltage Conversion Ratio Based on High Frequency LLC Resonant Converter
Wen Zhaoliang student Harbin Institute of Technology
Room2 /S7&S8 2021-08-27 14:30 ~ 14:45
ATTENDEE Oral presentation
Comparison Study on Short Circuit Capability of 1.2 kV Split-Gate MOSFET and Split-Source MOSFET with Integrated JBS Diode
Hongyi Xu Zhejiang University
Room2 /S7&S8 2021-08-27 16:15 ~ 16:30
ATTENDEE Oral presentation
Analysis of Crosstalk and Suppression Methods for Enhancement-Mode GaN HEMTs in A Phase-Leg Topology
Haihong Qin Nanjing University of Aeronautics and Astronautics
Room2 /S5&S6 2021-08-27 10:15 ~ 10:30
ATTENDEE Oral presentation
Comparing Hexagonal and Circular Cell Designs for SiC MPS Diode: The Curvature Effect on Avalanche Capability
Li Liu Zhejiang University
Room2 /S5&S6 2021-08-27 08:30 ~ 08:45
ATTENDEE Oral presentation
A Real-Time Self-Learning High Performance Control for Megahertz GaN-based DC-DC Converter
Jing Chen the State Key Laboratory of Advanced Electromagnetic Engineering and Technology; Huazhong University of Science and Technology
Room2 /S7&S8 2021-08-27 16:00 ~ 16:15
ATTENDEE Oral presentation
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