[116]Analysis of the influence of vibration and thermal vibration coupling on the power module
JiaJia Guan Huazhong University of Science and Technology
Room1/S1&S2 27 Aug 2021, 10:00-10:15
ATTENDEE Oral presentation
[115]Improved Breakdown Characteristics for AlN/GaN/InGaN Coupling Channel HEMTs with SiNx Removal and Backfill Technique
Hao Lu School of Microelectronics; Xidian University
Room2/S5&S6 27 Aug 2021, 08:45-09:00
ATTENDEE Oral presentation
[114]Analysis of GaN HEMT Degradation under RF Overdrive Stress
YiQiang Chen The No.5 Electronics Research Institute of the Ministry of Industry and Information Technology;YuHan Xie South China University of Technology
Room1/S1&S2 27 Aug 2021, 09:45-10:00
ATTENDEE Oral presentation
[113]Soft-Switching Resonant Active Clamp Flyback based-on GaN HEMTs for MHz High Step-Up Applications
Wuji Meng Nanjing University of Aeronautics and Astronautics
Room2/S7&S8 27 Aug 2021, 14:00-14:15
ATTENDEE Oral presentation
[112]Effects of p-type Islands Configuration on the Electrical Characteristics of the 4H-SiC Trench MOSFETs with Integrated Schottky Barrier Diode
Zhanwei Shen Chinese Academy of Sciences;Institute of Semiconductors
Room2
PUBLIC Poster Presentation
[111]Impacts of Power Level on Parasitic Capacitance in Copper-Foiled Medium-Voltage Inductors
Hongbo Zhao Aalborg University
Room1
ATTENDEE Oral presentation
[110]Characteristics of SiC MOSFET in a Wide Temperature Range
Mengyu Zhu Xi'an Jiaotong University
Room1/S1&S2 27 Aug 2021, 10:45-11:00
ATTENDEE Oral presentation
[109]Comparison Study of Parasitic Inductance, Capacitance and Thermal Resistance for Various SiC Packaging Structures
Yifan Zhang Huazhong University of Science and Technology
Room1/S3&S4 27 Aug 2021, 15:30-15:45
ATTENDEE Oral presentation
[107]Design and fabrication of low pinch-off voltage 700V lateral 4H-SiC MESFET with thin RESURF layer
Atsushi Shimbori Research Assistant University of Texas at Austin
Room2
ATTENDEE Oral presentation
[106]A Single-Stage Modular DCX with High Voltage Conversion Ratio Based on High Frequency LLC Resonant Converter
Wen Zhaoliang student Harbin Institute of Technology
Room2/S7&S8 27 Aug 2021, 14:30-14:45
ATTENDEE Oral presentation
[105]Comparison Study on Short Circuit Capability of 1.2 kV Split-Gate MOSFET and Split-Source MOSFET with Integrated JBS Diode
Hongyi Xu Zhejiang University
Room2/S7&S8 27 Aug 2021, 16:15-16:30
ATTENDEE Oral presentation
[104]Analysis of Crosstalk and Suppression Methods for Enhancement-Mode GaN HEMTs in A Phase-Leg Topology
Haihong Qin Nanjing University of Aeronautics and Astronautics
Room2/S5&S6 27 Aug 2021, 10:15-10:30
ATTENDEE Oral presentation
[103]Comparing Hexagonal and Circular Cell Designs for SiC MPS Diode: The Curvature Effect on Avalanche Capability
Li Liu Zhejiang University
Room2/S5&S6 27 Aug 2021, 08:30-08:45
ATTENDEE Oral presentation
[101]A Real-Time Self-Learning High Performance Control for Megahertz GaN-based DC-DC Converter
Jing Chen the State Key Laboratory of Advanced Electromagnetic Engineering and Technology; Huazhong University of Science and Technology
Room2/S7&S8 27 Aug 2021, 16:00-16:15
ATTENDEE Oral presentation
141 Records 3/10 < > 12345 >>5 >|