[116]Analysis of the influence of vibration and thermal vibration coupling on the power module
JiaJia Guan Huazhong University of Science and Technology
Room1/S1&S2
27 Aug 2021, 10:00-10:15
ATTENDEE Oral presentation
[115]Improved Breakdown Characteristics for AlN/GaN/InGaN Coupling Channel HEMTs with SiNx Removal and Backfill Technique
Hao Lu School of Microelectronics； Xidian University
Room2/S5&S6
27 Aug 2021, 08:45-09:00
ATTENDEE Oral presentation
[114]Analysis of GaN HEMT Degradation under RF Overdrive Stress
YiQiang Chen The No.5 Electronics Research Institute of the Ministry of Industry and Information Technology；YuHan Xie South China University of Technology
Room1/S1&S2
27 Aug 2021, 09:45-10:00
ATTENDEE Oral presentation
[113]Soft-Switching Resonant Active Clamp Flyback based-on GaN HEMTs for MHz High Step-Up Applications
Wuji Meng Nanjing University of Aeronautics and Astronautics
Room2/S7&S8
27 Aug 2021, 14:00-14:15
ATTENDEE Oral presentation
[112]Effects of p-type Islands Configuration on the Electrical Characteristics of the 4H-SiC Trench MOSFETs with Integrated Schottky Barrier Diode
Zhanwei Shen Chinese Academy of Sciences；Institute of Semiconductors
Room2
PUBLIC Poster Presentation
[111]Impacts of Power Level on Parasitic Capacitance in Copper-Foiled Medium-Voltage Inductors
Hongbo Zhao Aalborg University
Room1
ATTENDEE Oral presentation
[110]Characteristics of SiC MOSFET in a Wide Temperature Range
Mengyu Zhu Xi'an Jiaotong University
Room1/S1&S2
27 Aug 2021, 10:45-11:00
ATTENDEE Oral presentation
[109]Comparison Study of Parasitic Inductance, Capacitance and Thermal Resistance for Various SiC Packaging Structures
Yifan Zhang Huazhong University of Science and Technology
Room1/S3&S4
27 Aug 2021, 15:30-15:45
ATTENDEE Oral presentation
[107]Design and fabrication of low pinch-off voltage 700V lateral 4H-SiC MESFET with thin RESURF layer
Atsushi Shimbori Research Assistant University of Texas at Austin
Room2
ATTENDEE Oral presentation
[106]A Single-Stage Modular DCX with High Voltage Conversion Ratio Based on High Frequency LLC Resonant Converter
Wen Zhaoliang student Harbin Institute of Technology
Room2/S7&S8
27 Aug 2021, 14:30-14:45
ATTENDEE Oral presentation
[105]Comparison Study on Short Circuit Capability of 1.2 kV Split-Gate MOSFET and Split-Source MOSFET with Integrated JBS Diode
Hongyi Xu Zhejiang University
Room2/S7&S8
27 Aug 2021, 16:15-16:30
ATTENDEE Oral presentation
[104]Analysis of Crosstalk and Suppression Methods for Enhancement-Mode GaN HEMTs in A Phase-Leg Topology
Haihong Qin Nanjing University of Aeronautics and Astronautics
Room2/S5&S6
27 Aug 2021, 10:15-10:30
ATTENDEE Oral presentation
[103]Comparing Hexagonal and Circular Cell Designs for SiC MPS Diode: The Curvature Effect on Avalanche Capability
Li Liu Zhejiang University
Room2/S5&S6
27 Aug 2021, 08:30-08:45
ATTENDEE Oral presentation
[102]A Novel Low Parasitic Inductance SiC Power Module Based on Symmetrical Planar Packaging Structure and Integrating the Laminated Busbar
Yuanjian Liu HeFei University of Technology
Room1
ATTENDEE Oral presentation
[101]A Real-Time Self-Learning High Performance Control for Megahertz GaN-based DC-DC Converter
Jing Chen the State Key Laboratory of Advanced Electromagnetic Engineering and Technology； Huazhong University of Science and Technology
Room2/S7&S8
27 Aug 2021, 16:00-16:15
ATTENDEE Oral presentation